may 2011 2011 fairchild semiconductor corporation fdd6685 rev d1 fdd6685 30v p -channel powertrench mosfet general description this p -channel mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5v ? 25v). features ?40 a, ?30 v. r ds(on) = 2 0 m w @ v gs = ?10 v r ds(on) = 30 m w @ v gs = ?4.5 v fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability qualified to aec q101 g s d to-252 s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?30 v v gss gate -source voltage 25 v i d ?40 ?11 continuous drain current @t c =25c (note 3) @t a =25c (note 1a) pulsed , pw 100s (note 1b ) ?100 a power dissipation for single operation (note 1) 52 (note 1a) 3.8 p d (note 1b) 1.6 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r qjc thermal resistance, junction-to - case (note 1) 2.9 c/w r qja thermal resistance, junction-to -ambient (note 1a) 40 c/w r qja thermal resistance, junction-to -ambient (note 1b) 96 c/w this product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at http://www.aecouncil.com/ reliability data can be found at: http://www.fairchildsemi.com/products/ discrete/reliability/index.html. all fairchild semicondu ctor products are manufactured, assembled and tested under iso9000 and qs9000 quality systems certification. fdd 6685
fdd6685 rev d 1 package marking and ordering information device marking device reel size tape width quantity fdd6685 fdd6685 13? 12mm 2500 units electrical ch aracteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 4) e as single pulse drain-source avalanche energy i d = ?11 a 42 mj i as maximum drain-source avalanche current ?11 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 m a ?30 v dbvdss dt j breakdown voltage temperature coefficient i d = ?250 m a, referenced to 25c ?24 mv/ c i dss zero gate voltage drain current v ds = ?24 v, v gs = 0 v ?1 m a i gss gate ?body leakage v gs = 25v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 m a ?1 ?1.8 ?3 v dvgs(th) dt j gate threshold voltage temperature coefficient i d = ?250 m a, referenced to 25c 5 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?11 a v gs = ?4 .5 v, i d = ?9 a v gs = ?10 v,i d = ?11 a,t j =125c 14 21 20 20 30 mw i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?5 v, i d = ?11 a 26 s dynamic characteristics c iss input capacitance 1715 pf c oss output capacitance 440 pf c rss reverse transfer capacitance v ds = ?15 v, v gs = 0 v, f = 1.0 mhz 225 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 3.6 w switching characteristics (note 2) t d(on) turn?on delay time 17 31 ns t r turn?on rise time 11 21 ns t d(off) turn?off delay time 43 68 ns t f turn?off fall time v dd = ?15 v, i d = ?1 a, v gs = ?10 v, r gen = 6 w 21 34 ns q g total gate charge 17 24 nc q gs gate ?source charge 9 nc q gd gate ?drain charge v ds = ?15v, i d = ?11 a, v gs = ?5 v 4 nc drain? source diode characteristics and maximum ratings v sd drain?source diode forward voltage v gs = 0 v, i s = ?3.2 a (note 2) ?0.8 ?1.2 v trr diode reverse recovery time 26 ns qrr diode reverse recovery charge if = ?11 a, dif/dt = 100 a/s 13 nc fdd 6685 fdd 6685
fdd6685 rev d1 electrical characteristics t a = 25c unless otherwise noted notes: 1. r qja is the sum of the junction- to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r qca is determined by the user's board design. a) r qja = 40c/w when mounted on a 1in 2 pad of 2 oz copper b) r qja = 96c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300ms, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power diss ipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. 4. starting t j = 25c, l = 0.69mh, i as = ?11a ) on ( ds d r p fdd6685
fdd6685 rev d1 typical characteristics 0 10 20 30 40 0 1 2 3 -v ds , drain-source voltage (v) -i d , drain current (a) -6.0v -5.0v -4.5v -3.5v v gs = -10v -4.0v -3.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 8 10 -i d , drain current (a) normalized drain-source on-resistance v gs = -3.5v -5.0v -6.0v -8.0v -10v -4.5v -4.0v figure 1. on -region characteristics. figure 2. on -resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) normalized drain-source on-resistance i d = -11.0a v gs = -10v 0 0.02 0.04 0.06 0.08 2 4 6 8 10 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -5.5a t a = 125 o c t a = 25 o c figure 3. on -resistance variation with temperature. figure 4. on -resistance variation with gate-to-source voltage. 0 10 20 30 40 1 2 3 4 5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdd 6685
fdd6685 rev d 1 typical characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -11.0 a v ds = 10v 20v 30v 0 600 1200 1800 2400 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 1000 0.01 0.10 1.00 10.00 100.00 v ds , drain-source voltage (v) i d , drain current (a) dc 1 100ms r ds(on) limit v gs = 10v single pulse r qja = 96 o c/w t a = 25 o c 10ms 1ms 100s 10s 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r qja = 96c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdd 6685 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), normalized effective transient thermal resistance t 1 , time (sec) r q ja (t) = r(t) * r q ja r q ja = 96 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
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auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i54
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